P Channel Fet

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P Channel Fet

This page on n-channel FET vs p-channel FET mentions difference between n-channel FET and p-channel FET.

Following section compares both FET types with respect to their features, symbol and construction.

n-channel FET

As shown in figure-1, n-channel FET is constructed using a bar of N-type material into which a pair ofP-type regions are diffused. Fig-1 also mentions circuit symbol of n-channel FET.

P-channel, MOSFETs manufactured by Vishay, a global leader for semiconductors and passive electronic components.

  • If the MOSFET is an n-channel or nMOS FET, then the source and drain are n+ regions and the body is a p region. If the MOSFET is a p-channel or pMOS FET, then the source and drain are p+ regions and the body is a n region. The source is so named because it is the source of the charge carriers (electrons for n-channel, holes for p-channel) that.
  • P - Channel MOSFET. The construction and working of a PMOS is same as NMOS. A lightly doped n-substrate is taken into which two heavily doped P+ regions are diffused. These two P+ regions act as source and drain. A thin layer of SiO 2 is grown over the surface. Holes are cut through this layer to make contacts with P+ regions, as shown in the.

Following are the features of N-channel Junction FET(JFET):
• Current carriers are electrons in n-channel FET.
• Mobility of electrons is large.
• Input noise is low.
• Trans-conductance is large.

p-channel FET

Similar to n-channel FET, p-channel FET is constucted using a bar of P-type material into which a pair ofN-type regions are diffused. Fig-2 mentions circuit symbol of p-channel FET.

Following are the features of P-channel Junction FET(JFET):
• Current carriers are holes in p-channel FET.
• Mobility of holes is poor.
• Input noise is large.
• Trans-conductance is small.

From the comparison between n-channel FET and p-channel FET it isimperative that n-channel FET serves better than p-channel FET.

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