Nanowire Fet

Next Level Gate-All-Around (GAA) Transistor Technology test

Samsung Foundry's patented Gate-All-Around technology, Multi-Bridge Channel FET (MBCFET™), offers designers a powerful new transistor technology for powerful, high-performance chips.

Silicon nanowire field effect transistor (FET) sensors have demonstrated their ability for rapid and label-free detection of proteins, nucleotide sequences, and viruses at ultralow concentrations with the potential to be a transformative diagnostic technology.

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The high‐quality self‐aligned nanowire channels possess clean surface and the fabricated FET devices exhibit excellent performance including large on/off ratio, small subthreshold slope and small leakage current. Such an effective nanowire integration scenario is very attractive for different materials and device investigations. Abstract: Performance, scalability, and resilience to variability of Si SOI FinFETs and gate-all-around (GAA) nanowires (NWs) are studied using in-house-built 3-D simulation tools. Two experimentally based devices, a 25-nm gate length FinFET and a 22-nm GAA NW are modeled and then scaled down to 10.7and 10-nm gate lengths, respectively. The vertical nanowire FET Gate-all-around (GAA) nanowire/nanosheet FETs are, to a certain extent, a natural evolution of today's FinFET technology. In these devices, the gate is fully wrapped around the thin conduction channel (the nanowire) of the transistor, allowing superior short channel electrostatic (SCE) control, as required for more. Si (100) nanowire FET device You will now consider a Si (100) nanowire field-effect transistor with a cylindrical wrap-around gate.

Performance Improvement

A Critical Breakthrough in GAA Design

Samsung Foundry's unique, patented MBCFET™ GAA is formed as a nanosheet, which allows for a larger current per stack and enables simpler device integration.

Silicon nanowire field effect transistor (FET) sensors have demonstrated their ability for rapid and label-free detection of proteins, nucleotide sequences, and viruses at ultralow concentrations with the potential to be a transformative diagnostic technology.

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The high‐quality self‐aligned nanowire channels possess clean surface and the fabricated FET devices exhibit excellent performance including large on/off ratio, small subthreshold slope and small leakage current. Such an effective nanowire integration scenario is very attractive for different materials and device investigations. Abstract: Performance, scalability, and resilience to variability of Si SOI FinFETs and gate-all-around (GAA) nanowires (NWs) are studied using in-house-built 3-D simulation tools. Two experimentally based devices, a 25-nm gate length FinFET and a 22-nm GAA NW are modeled and then scaled down to 10.7and 10-nm gate lengths, respectively. The vertical nanowire FET Gate-all-around (GAA) nanowire/nanosheet FETs are, to a certain extent, a natural evolution of today's FinFET technology. In these devices, the gate is fully wrapped around the thin conduction channel (the nanowire) of the transistor, allowing superior short channel electrostatic (SCE) control, as required for more. Si (100) nanowire FET device You will now consider a Si (100) nanowire field-effect transistor with a cylindrical wrap-around gate.

Performance Improvement

A Critical Breakthrough in GAA Design

Samsung Foundry's unique, patented MBCFET™ GAA is formed as a nanosheet, which allows for a larger current per stack and enables simpler device integration.

Nanosheets can be stacked vertically instead of adding fins like with FinFETs

Designers can replace FinFET's with MBCFET's™ without changing footprints

MBCFET™ shares the same process tools and manufacturing methodology as FinFET

MBCFET™ is Coming Soon

Samsung's 3nm will be the first process node to use this game-changing new GAA transistor technology. Expect to see designs starting with this latest technology in 2021.

Redefining What's Possible

MBCFET™ is the most advanced semiconductor technology available today. From low power to high-performance applications, MBCFET™ is ready to drive the next wave of innovation in artificial intelligence (AI), autonomous driving, 5G, and high-performance computing (HPC).

Watch: How Samsung's MBCFET™ Will Outperform FinFet Based Process Nodes

MBCFET™ is expected to become the gold standard in GAA-based process nodes, powering next-generation applications and exciting new future tech.

MBCFET™ technology has arrived and you have questions… Check out our FAQ's

What are Gate-All-Round transistors?

GAA transistors are field-effect transistors (FET) that feature gates wrapped on all four sides around ultrathin channels. This improved gate control of the channel overcomes the physical scaling and performance limitations of FinFETsand enables further supply voltagescaling.

What chip design challenges does Samsung's MBCFET address?

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Nanoscale High-k Metal Gate based FINFET transistors are reaching physical and electrostatic scaling limits. A new transistor is necessary to continueperformance, power and area scaling when designing chips at the most advanced technology process nodes.

Which process node does Samsung plan to start using its GAA transistor technology?

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Samsung's 3nm will be the first process node to use GAA transistor technology.

When will Samsung's MBCFET be in mass production?

Samsung expects to be in mass production with MBCFET transistors by 2022.

How does Samsung's MBCFET transistor technology differ from other forms of GAA?

Silicon Nanowire Fet Biosensor

GAA based FETs (GAAFETs) can come in a variety of form factors. Some research has focused on nanowire-based GAAFETs, with a small effective channel width and making the channel as thin as possible. These type of GAAFETs are typically useful for low power designs, but are difficult to manufacture. Another implementation makes the channel from ultrathin horizontal nanosheets, thereby increasing the effective channel width, which affords benefits towards performance and continued scaling. This nano-sheet based GAAFET is what Samsung calls a Multi-Bridge Channel FET, or MBCFET.

How long has Samsung been working on its GAA transistor technology?

Samsung has been working on GAA transistor technology since the early 2000s.

What does GAA actually do for the overall chip design?

MBCFET GAA technology ensures that the gate is not only on the top and the sides of the channel, but also below the channel. This horizontal gate wrap around architecture allows a GAA design to have high area efficiency by stacking transistors vertically, rather than laterally. While transistor widths in FinFET designs are inherently quantized, MBCFET GAA provides designers with flexibility in choosing transistor widths like in conventional planar bulk technologies.

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Samsung Foundry MBCFET™ in the News

MBCFET™ technology is available now, only from Samsung. Check out the recent news.

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